Drain characteristic of FET
The curve between drain current ID and drain source voltage VDS of a FET at constant gate source voltage VGS is known as drain or output characteristics of FET. The below fig shows the circuit for determining the output characteristics of FET. Keeping VGS fixed at some value, the drain – source voltage is changed in steps. Corresponding to each value of VDS the drain current ID is noted. A plot of these value gives the output characteristics of FET. Repeating similar procedure, output characteristics at other gate _ source voltage can be drawn. The fig shows a family of output characteristics understand the nature of the drain characteristics. Let us consider the characteristics for VGS = 0, the channel between the gate junctions is fully open. On application of small voltage of VDS, the n-type bar simply acts as a semiconductor and the drain current ID increase linearly with VDS. As the voltage VDS is progressively increased a value of VDS is reached at which the channel is pinched off. With further increases of VDS, the current IDbegins to level off and approaches a constant value. The value of VDSat which the channel is pinched off i.e. all the free charges from the channel are removed, is called pinch off voltage VP. Further increases of VDS causes the avalanche breakdown.
Now let us assume that the gate is supplied with negative voltage. In this case the junction is reverse biased. Hence the conducting portion of the channel is reduced. The resulting drain characteristics are similar to the one for VGS = 0, except that the pinch off occurs for smaller values of VDS. The breakdown also occurs at lower VDS. If the gate voltage is increased further negatively biasing the gate junction, we obtain characteristics similar to the one obtained above. All such characteristics will show a reduction in pinch off voltage smaller where the drain current is proportional to the VDSand lower breakdown voltages.
(a) Circuit for Determining the Drain Charecteristics
(b) Drain Charecteristics
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